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1

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Rossetto, Isabella, Meneghini, Matteo, Hilt, Oliver, Bahat-Treidel, Eldad, De Santi, Carlo, Dalcanale, Stefano, Wuerfl, Joachim, Zanoni, Enrico, Meneghesso, Gaudenzio

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.73 MB

english, 2016

2

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Hilt, Oliver, Bahat-Treidel, Eldad, Cho, Eunjung, Singwald, Sebastian, Wurfl, Joachim

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

3

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Hilt, Oliver, Zhytnytska, Rimma, Bocker, Jan, Bahat-Treidel, Eldad, Brunner, Frank, Knauer, Arne, Dieckerhoff, Sibylle, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 653 KB

english, 2015

4

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

A. Glowacki, P. Laskowski, C. Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 766 KB

english, 2009

5

Continuously controllable, wide-angle liquid crystal beam deflector based on the transversal field effect in a three-electrode cell

Bahat-Treidel, Eldad

Journal:

Optical Engineering

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005

6

Discussion on “An electric harmonic analyser” before the Scottish Centre, at Glasgow, 9 December, 1924

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Journal:

Journal of the Institution of Electrical Engineers

Year:

1925

Language:

english

File:

PDF, 463 KB

english, 1925

7

Breakdown and dynamic effects in GaN power switching devices

Würfl, Joachim, Hilt, Oliver, Bahat-Treidel, Eldad, Zhytnytska, Rimma, Kotara, Przemyslaw, Krüger, Olaf, Brunner, Frank, Weyers, Markus

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 473 KB

english, 2013

8

On the Fringing-Field Effect in Liquid-Crystal Beam-Steering Devices

Apter, Boris, Efron, Uzi, Bahat-Treidel, Eldad

Journal:

Year:

2004

Language:

english

File:

PDF, 327 KB

english, 2004

9

SPIE Proceedings [SPIE Optics & Photonics 2005 - San Diego, California, USA (Sunday 31 July 2005)] Free-Space Laser Communications V - Electro-optical wide-angle beam deflection based on transversal-field-induced refractive inhomogeneity in a liquid crystal layer

Voelz, David G., Apter, Boris, Bahat-Treidel, Eldad, Ricklin, Jennifer C., Efron, Uzi

Year:

2005

Language:

english

File:

PDF, 1.01 MB

english, 2005

10

Experimental study of phase-step broadening by fringing fields in a three-electrode liquid-crystal cell

Bahat-Treidel, Eldad, Apter, Boris, Efron, Uzi

Journal:

Year:

2005

Language:

english

File:

PDF, 221 KB

english, 2005

11

SPIE Proceedings [SPIE Optics & Photonics 2005 - San Diego, California, USA (Sunday 31 July 2005)] Liquid Crystals IX - Studies of fringing field effects in liquid crystal beam-steering devices

Efron, Uzi, Khoo, Iam-Choon, Apter, Boris, Bahat-Treidel, Eldad

Year:

2005

Language:

english

File:

PDF, 473 KB

english, 2005

12

AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 146 KB

english, 2010

13

Investigation of the Dynamic On-State Resistance of 600V Normally-off and Normally-on GaN HEMTs

Badawi, Nasser, Boecker, Jan, Hilt, Oliver, Bahat-Treidel, Eldad, Wuerfl, Hans-Joachim, Dieckerhoff, Sibylle

Journal:

IEEE Transactions on Industry Applications

Year:

2016

Language:

english

File:

PDF, 4.08 MB

english, 2016

14

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Ivo, Ponky, Glowacki, Arkadiusz, Pazirandeh, Reza, Bahat-Treidel, Eldad, Lossy, Richard, Wurfl, Joachim, Boit, Christian, Trankle, Gunther

Year:

2009

Language:

english

File:

PDF, 764 KB

english, 2009

15

Fringing-field effect in liquid-crystal beam-steering devices: an approximate analytical model

Efron, Uzi, Apter, Boris, Bahat-Treidel, Eldad

Journal:

Journal of the Optical Society of America A

Year:

2004

Language:

english

File:

PDF, 383 KB

english, 2004

16

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Eldad Bahat-Treidel, Ibrahim Khalil, Oliver Hilt, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

17

[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

Capriotti, Mattia, Fleury, Clement, Bethge, Ole, Rigato, Matteo, Lancaster, Suzanne, Pogany, Dionyz, Strasser, Gottfried, Bahat-Treidel, Eldad, Brunner, Oliver Hilt Frank, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

18

Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

Eldad Bahat-Treidel, Oliver Hilt, Fank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

19

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Frank Brunner, Eldad Bahat-Treidel, Melanie Cho, Carsten Netzel, Oliver Hilt, Joachim Würfl, Markus Weyers

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 222 KB

english, 2011

20

[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - Evaluation of 600V GaN and SiC Schottky diodes at different temperatures

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Year:

2013

Language:

english

File:

PDF, 446 KB

english, 2013

21

[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Dynamic drift effects in GaN power transistors: Correlation to device technology and mission profile

Wurfl, Joachim, Bahat-Treidel, Eldad, Hilt, Oliver, Troppenz, Maria, Wolf, Mihaela, Bocker, Jan, Kuring, Carsten, Dieckerhoff, Sibylle

Year:

2018

Language:

english

File:

PDF, 1.01 MB

english, 2018

22

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Hilt, Oliver, Bahat-Treidel, Eldad, Knauer, Arne, Brunner, Frank, Zhytnytska, Rimma, Würfl, Joachim

Journal:

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

23

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Wuerfl, Joachim, Bahat-Treidel, Eldad, Brunner, Frank, Cho, M., Hilt, Oliver, Knauer, Arne, Kotara, Przemyslaw, Weyers, Markus, Zhytnytska, Rimma

Year:

2011

Language:

english

File:

PDF, 2.08 MB

english, 2011

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